DFT simulation of stacking faults defects in 4H-SiC

机译：4H-SiC堆垛层错缺陷的DFT模拟

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In this paper, the results of ab-initio simulation of crucial defects which are present in 4H-SiC are shown. Band structures and DOS for point defect and Stacking Faults (SF) are presented here.

机译：本文显示了从头开始模拟出现在4H-SiC中的关键缺陷的结果。这里介绍了用于点缺陷和堆垛层错（SF）的能带结构和DOS。

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《International Conference on Perspective Technologies and Methods in MEMS Design》|2018年|65-68|共4页
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Janusz Wozny; Andrii Kovalchuk; Zbigniew Lisik; Jacek Podgorski; Piotr Bugalski; Andrzej Kubiak; Lukasz Ruta;
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Stacking; Silicon carbide; Carbon; Photonic band gap; Crystals; Monte Carlo methods; Physics;

机译：堆叠;碳化硅;碳;光子带隙;晶体;蒙特卡罗方法;物理;

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1. 密排六方钛中基面堆垛层错导致的孪晶界滑移、孪生台阶及孪晶生长:第一性原理研究 [J] . 钱琦, 刘正卿, 江勇, 中国有色金属学报：英文版 . 2021,第002期
2. Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers [J] . Hideki Sako, Kentaro Ohira, Kenji Kobayashi, Materials science forum . 2020,第期

机译：4H-SIC ePI晶片两种胡萝卜缺陷的棱镜堆叠故障的结构表征
3. Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes [J] . Kazuya Konishi, Shuhei Nakata, Yoshiyuki Nakaki, Japanese journal of applied physics . 2013,第4Issue2期

机译：三角形缺陷中的堆叠缺陷对4H-SiC结势垒肖特基二极管的影响
4. Effects of stacking faults on electron transport in 4H-SiC n-type epilayers under unipolar operation evaluated by TCAD simulation [J] . Asada Satoshi, Miyazawa Tetsuya, Tsuchida Hidekazu Japanese journal of applied physics . 2020,第5期

机译：TCAD仿真评价单极运算下4H-SiC n型脱落器电子传输堆垛机的影响
5. DFT simulation of stacking faults defects in 4H-SiC [C] . Janusz Wozny, Andrii Kovalchuk, Zbigniew Lisik, International Conference on Perspective Technologies and Methods in MEMS Design . 2018

机译：4H-SIC堆叠故障缺陷的DFT模拟
6. Defect Characterization of 4H-SiC by Deep Level Transient Spectroscopy (DLTS) and Influence of Defects on Device Performance [D] . Mannan, Mohammad Abdul 2015

机译：用深层瞬态光谱法（DLTS）表征4H-SiC的缺陷及其对器件性能的影响
7. Ab initio molecular dynamics simulation of the effects of stacking faults on the radiation response of 3C-SiC [O] . M. Jiang, S. M. Peng, H. B. Zhang, -1

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8. Defects created in N-doped 4H-SiC by flexion in the brittle regime: Stacking fault multiplicity and dislocation cores. [O] . Lancin Maryse, Texier Michael, Regula Gabrielle, 2009

机译：N掺杂的4H-SiC在脆性状态下的弯曲会产生缺陷：堆垛层错多重位错堆芯。

DFT simulation of stacking faults defects in 4H-SiC

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