Development of high performance synchronous rectifier module by multi-chip Cu sintering technology (IMPACT 2018)

摘要

In Recent year, the traditional Si and wide band-gap power semiconductor devices, particularly Si MOSFET, Si IGBT, SiC MOSFET and GaN E-HEMT have gained considerable attention in several industrial applications such as the hybrid electric vehicle, the internet data center and aero-space applications. Attachment of power semiconductor devices to an insulated metal carrier substrate is essential for providing electrical and structural connections as well as a heat dissipation path. The die attach materials play a vital role in ensuring the system performance and reliability. In this study, the key technologies including multi-chip Cu paste sintering and panel level packaging have been developed. With an optimized process condition, a voidless die attaching joint was gained, and the die shear strength was as high as 70 MPa as sintering. Furthermore, the reduction of thermal resistance was measured by using Cu sintering, and the electrical performance of the newly developed Synchronous Rectifier was fully reported in this study.