Improving Throughput of Zero-Kerf Singulation for Ultra-Thin Wafers using Stealth Dicing

摘要

This paper describes a technique for improving the throughput in singulation of ultra-thin wafers using a dicing method called Stealth Dicing. We evaluated how beam shaping with a spatial light modulator and the processing laser wavelengths (1080 nm and 1099 nm) having different transmittances in silicon wafers affected the processing performance. By applying Stealth Dicing with aberration correction and multi-beam irradiation using a 1099 nm laser, the throughput was improved by approximately a factor of two compared with conventional Blade Dicing. The method shows promise for achieving high productivity for volume production.