A physics-based compact gallium nitride power semiconductor device model for advanced power electronics design

摘要

A physics-based compact gallium nitride power semiconductor device model is presented in this work, which is the first of its kind. The model derivation is based on the classical drift-diffusion model of carrier transport, which expresses the channel current as a function of device threshold voltage and externally applied electric fields. The model is implemented in the Saber® circuit simulator using the MAST hardware description language. The model allows the user to extract the parameters from the dc I-V and C-V characteristics that are also available in the device datasheets. A commercial 80 V EPC GaN HEMT is used to demonstrate the dynamic validation of the model against the transient device characteristics in a double-pulse test and a boost converter circuit configuration. The simulated versus measured device characteristics show good agreement and validate the model for power electronics design and applications using the next generation of GaN HEMT devices.