首页> 外文会议>Conference on Ph.D. Research in Microelectronics and Electronics >A 1.2 V bandgap reference with an additional 29.6 ppm/°C temperature stable output current
【24h】

A 1.2 V bandgap reference with an additional 29.6 ppm/°C temperature stable output current

机译:1.2 V带隙基准,具有29.6 ppm /°C的温度稳定输出电流

获取原文

摘要

This paper presents a precise 1.175 V voltage reference bandgap circuit with an additional temperature compensated current output for DC-DC switch mode converters. The nominal temperature coefficient (TC) of the bandgap voltage is 13 ppm/°C from -40°C to 140°C. With the proposed circuit architecture output voltage deviations as low as ±18 mV (±3 s) from the nominal bandgap voltage are achieved. The reference output current measures 1 μA with a temperature stability of 29.6 ppm/°C. The circuit is designed in a 0.18 μm HV-CMOS process to operate from a 1.8 V supply voltage with a simulated overall current consumption of approximately 50 μA. The proposed bandgap reference circuit occupies a silicon die area of 0.05mm.
机译:本文提出了一种精确的1.175 V电压基准带隙电路,该电路具有用于DC-DC开关模式转换器的附加温度补偿电流输出。带隙电压的标称温度系数(TC)在-40°C至140°C之间为13 ppm /°C。利用所提出的电路架构,与标称带隙电压的输出电压偏差可低至±18 mV(±3 s)。参考输出电流为1μA,温度稳定性为29.6 ppm /°C。该电路采用0.18μmHV-CMOS工艺设计,可在1.8 V电源电压下工作,模拟总功耗约为50μA。拟议的带隙基准电路占据了0.05mm的硅芯片面积。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号