A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

摘要

A high-precision and low-temperature-coefficient bandgap voltage reference is proposed in 0.11 μm CMOS process. A temperature piecewise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from -40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.