Novel method for determining front-side metallisation-induced recombination parameters in silicon solar cells

摘要

Metallisation of phosphorus-doped silicon surfaces using screen-printed silver pastes is a key process in the production of silicon wafer solar cells. The metal-silicon interface in a solar cell is a highly recombination-active region that impacts the device voltage. In order to optimize screen printing for silicon wafer solar cells it is necessary to reliably determine recombination parameters at the metal-silicon interface. A novel method is presented in this paper to determine such parameters for multicrystalline silicon solar cells by applying photoluminescesnce (PL) imaging at various illumination intensities on finished cells and test structures with a varying front metallisation fraction.