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Study of the spin on dopant technique as alternative for the fabrication of c-Si solar cells

机译:研究自旋掺杂技术作为制造c-Si太阳能电池的替代方法

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In this work is reported a simple fabrication process of crystalline silicon (c-Si) solar cells using a n-type liquid source (Spin-On-Dopant, SOD) for the solar cell emitter formation. The solar cells were fabricated on p-type (5-15 Ωcm), (100), low cost Czochralski (Cz) silicon wafers and were textured using a solution based on potassium hydroxide (KOH). The efficiency reached in this work was of 14 % in a solar cell of 100 mm2. Despite the efficiency reported in this work is still lower than that achieved in high efficiency c-Si solar cells, it is important to stress that the simplicity of the fabrication process, the use of low cost CZ wafers and the use of SOD instead of doping gases (PH3 or POCL3), made this work interesting for a low cost and industrially compatible fabrication process of solar cells.
机译:在这项工作中,报道了一种简单的晶体硅(c-Si)太阳能电池制造工艺,该工艺使用n型液体源(自旋掺杂剂,SOD)进行太阳能电池发射极的形成。太阳能电池是在p型(5-15Ωcm),(100)低成本Czochralski(Cz)硅晶片上制造的,并使用基于氢氧化钾(KOH)的溶液进行纹理化处理。在100 mm2的太阳能电池中,这项工作所达到的效率为14%。尽管这项工作报告的效率仍然低于高效c-Si太阳能电池,但需要强调的是,制造工艺简单,使用低成本CZ晶片以及使用SOD代替掺杂气体(PH3或POCL3),使这项工作变得有趣,因为它具有低成本和工业兼容的太阳能电池制造工艺。

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