Effects of sheet resistance on selective emitter solar cells by laser direct doping

摘要

This article investigates the effects of sheet resistance on a selective emitter (SE) solar cell fabricated using a simple laser doping process (LD). In order to demonstrate the influence of lightly doped emitter we divided cells for three groups for POCl3 diffusion with sheet resistance of 100 Ω/sq (SE-1), 120 Ω/sq (SE-2) and 140 Ω/sq (SE-3). After laser doping, the sheet resistance is ~60 Ω/sq for silver electrode contact. The optimal cell with sheet resistance values of 60/120Ω/sq showed the best efficiency (η) of 20.11 %, open circuit of 650 mV.