Sensitivity investigation of gate-all-around junctionless transistor for hydrogen gas detection

摘要

In recent time, a MOSFET based gas sensor has been widely used for low cost and high sensitive sensor for a wide range of industrial and domestic applications. In this paper, a gate-all-around Gas-sensing Junctionless Nanowire Transistor (G-JNT) with catalytic metal gate i.e. palladium (Pd) is proposed for the first time for high sensitivity and low power hydrogen gas detection using ATLAS-3D device simulator. Shift in channel potential, subthreshold current and in threshold voltage is used to predict the response of the sensor. Impact of silicon pillar radius, gate oxide width and gate length on the sensitivity of G-JNT has been investigated in details. Results exhibit that junctionless Transistor with catalytic metal gate is the suitable candidate for hydrogen molecule detection.