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Microsystem for Remote Sensing of High Energy Radiation with Associated Extremely Low Flux Densities

机译:具有极低通量密度的高能辐射遥感微系统

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This paper presents a microsystem for remote sensing of high energy radiation in extremely low flux density conditions. With wide deployment in mind, potential applications range from nuclear non-proliferation, to hospital radiation-safety. The daunting challenge is the low level of photon flux densities - emerging from a Scintillation Crystal (SC) on to a ~1 mm-square detector, which are a factor of 10000 or so lower than those acceptable to recently reported photonic chips (including 'single-photon detection' chips), due to a combination of low Lux, small detector size, and short duration SC output pulses - on the order of 1 us. These challenges are attempted to be overcome by the design of an innovative 'System on a Chip' type microchip, with high detector sensitivity, and effective coupling from the SC to the photodetector. The microchip houses a tiny n+ diff p-epi photodiode (PD) as well as the associated analog amplification and other related circuitry, all fabricated in 0.5micron, 3-metal 2-poly CMOS technology. The amplification, together with pulse-shaping of the photocurrent-induced voltage signal, is achieved through a tandem of two capacitively coupled, double-cascode amplifiers. Included in the paper are theoretical estimates and experimental results.
机译:本文提出了一种用于在极低的通量密度条件下遥感高能辐射的微系统。考虑到广泛的部署,潜在的应用范围从核不扩散到医院的辐射安全。艰巨的挑战是低水平的光子通量密度-从闪烁晶体(SC)到约1平方毫米的检测器,比最近报道的光子芯片可接受的光子通量密度低10000倍左右(包括“低光通量,较小的检测器尺寸和较短的SC输出脉冲持续时间-大约1 us。通过设计具有高检测器灵敏度以及从SC到光电检测器的有效耦合的创新“芯片上系统”型微芯片,可以克服这些挑战。该微芯片包含一个纤巧的n + diff p-epi光电二极管(PD)以及相关的模拟放大和其他相关电路,所有这些电路均采用0.5微米3金属2多晶硅CMOS技术制造。放大以及光电流感应电压信号的脉冲整形是通过串联两个电容耦合双共源共栅放大器实现的。本文包括理论估计和实验结果。

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