Direct Writing of Enriched Single Walled Carbon Nanotubes towards Thin Film Transistors (TFTs)

摘要

This paper focuses on the utilization of carbon nanotubes for the fabrication of thin film transistors (TFTs) using a direct-write inkjet process. Single walled carbon nanotubes (SWNTs) are well-regarded for their superior electrical, magnetic, and thermal properties. The development of TFTs requires high carrier mobility that is comparable to SWNTs (100,000 cm~2/V.s) which can be doped as both n and p-types. Enriched semiconducting SWNTs (s-SWNTs) with specific chiralities provide consistent band gap required for the fabrication of transistors with reproducible electrical properties. In this research we investigate the use of a direct write inkjet process for depositing enriched s-SWNTs on polymeric substrates with the aim of fabricating flexible thin film transistors (f-TFTs). The direct writing technique provides accurate deposition control and reproducibility to print s-SWNTs over large areas. We demonstrate the fabrication of SWNT traces with varying conductivity characteristics towards large-scale f-TFTs.