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The Computational Study of Subdural Cortical Stimulation: A Quantitative Analysis of Voltage and Current Stimulation

机译:硬膜体皮质刺激的计算研究:电压和电流刺激的定量分析

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We investigated the effect of electrode type and stimulation condition (voltage stimulation and current stimulation) in bi-polar subdural cortical stimulation (SCS). For this study, we developed a 3D realistic head model using MRI data with 1 mm3 spatial resolution and simulated the model using the finite element method (FEM). For each study, we used three types of electrodes - disc, ring, and covered-disc - and three efficiency measures - effective depth of penetration, effective volume, and amount of CSF leakage current - to compare the effectiveness of the stimulation between two stimulation conditions. With voltage stimulation, there was no difference in effectiveness between the disc and ring electrodes. However, the amount of CSF leakage current for the covered-disc type was lower than that for the others. The effective depth of penetration and volume for the ring and disc type electrodes were higher than those for the covered-disc type. The current stimulation using the covered-disc electrode penetrated deeper than the other types of electrodes, and the CSF leakage current was still low. The result for voltage and current stimulation was quite different, as the substrate design manipulated the impedance and output current. In the current simulation, if the electrode was covered with the substrate, more current flowed to the cortex. On the other hand, with voltage stimulation, this substrate design makes the impedance between electrodes high, and the total current is reduced.
机译:我们研究了电极型和刺激条件(电压刺激和电流刺激)在双极硬膜体皮质刺激(SCS)中的影响。对于本研究,我们使用具有1 mm3空间分辨率的MRI数据开发了3D现实头模型,并使用有限元方法(FEM)模拟模型。对于每项研究,我们使用了三种类型的电极 - 盘,环和覆盖盘 - 以及三个效率测量 - 有效的渗透深度,有效的体积和CSF漏电流的量 - 以比较两个刺激之间刺激的有效性状况。通过电压刺激,盘和环电极之间的有效性没有差异。然而,覆盖盘式的CSF漏电流的量低于其他光盘类型的量。环形和盘式电极的渗透和体积的有效深度高于覆盖盘类型的深度。使用覆盖盘电极的电流刺激穿过比其他类型的电极更深,并且CSF漏电流仍然很低。随着基板设计操纵阻抗和输出电流,电压和电流刺激的结果非常不同。在电流模拟中,如果用基板覆盖电极,则流动到皮质的更多电流。另一方面,通过电压刺激,该基板设计使电极之间的阻抗变为高电平,并且总电流降低。

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