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Finite Difference Time Domain (FDTD) Modeling of Implanted Deep Brain Stimulation Electrodes and Brain Tissue

机译:有限差分时域(FDTD)植入深脑刺激电极和脑组织的建模

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This paper demonstrates the electromagnetic modeling and simulation of an implanted Medtronic deep brain stimulation (DBS) electrode using finite difference time domain (FDTD). The model is developed using Empire XCcel and represents the electrode surrounded with brain tissue assuming homogenous and isotropic medium. The model is created to study the parameters influencing the electric field distribution within the tissue in order to provide reference and benchmarking data for DBS and intra-cortical electrode development.
机译:本文展示了使用有限差分时域(FDTD)植入的亮度深脑刺激(DBS)电极的电磁建模和模拟。该模型是使用帝国XCCEL开发的,表示假设均匀和各向同性培养基的脑组织包围的电极。创建模型以研究影响组织内电场分布的参数,以便为DB和内部内部电极开发提供参考和基准数据。

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