首页> 外文会议>Annual IEEE Applied Power Electronics Conference and Exposition >High Voltage, High Power Density Bi-Directional Multi-Level Converters Utilizing Silicon and Silicon Carbide (SiC) Switches
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High Voltage, High Power Density Bi-Directional Multi-Level Converters Utilizing Silicon and Silicon Carbide (SiC) Switches

机译:利用硅和碳化硅(SIC)开关的高电压,高功率密度双向多级转换器

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This paper presents a bi-directional ac-dc isolated converter designed to be utilized within the US Navy's Integrated Fight Through Power (IFTP) concept. To demonstrate the proposed approach the authors have designed, fabricated, and tested a 20 kW Power Conversion Module (PCM) prototype. The fabricated PCM module was used to demonstrate the proposed overall electrical design approach, high-frequency isolation, bi-directional power flow and soft-switching operation of the quasi-resonant topologies. Moreover, the 20-kW prototype allowed the verification of control methodologies as well as magnetic and thermal designs, and provides a test bed for future, higher power work.
机译:本文介绍了一款双向AC-DC隔离转换器,旨在通过电力(IFTP)概念在美国海军的集成战斗中使用。为了展示所提出的方法,作者设计,制造和测试了20 kW电力转换模块(PCM)原型。制造的PCM模块用于展示准谐振拓扑的提出的整体电气设计方法,高频隔离,双向功率流和软切换操作。此外,20-KW原型允许验证控制方法以及磁性和热设计,并为未来提供测试床,更高的功率工作。

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