Ultra-Short-Channel Characteristics of Planar MOSFETs With Block Oxide

摘要

In this work, the investigation of block oxide used in planar MOSFETs has been studied. To solve these above issues and for the comparison, we propose two novel device architectures; one is called the FDSOI with block oxide (bFDSOI) and the other is called the Si on partial insulator with block oxide field-effect transistor (bSPIFET)