Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions

摘要

Au contacts have been prepared to In0.12Ga0.88As0.11Sb0.89/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In0.12Ga0.88As0.11Sb0.89/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances. Au on GaSb:Ge/GaSb:Te epitaxial structures resulted in very good ohmic contact.