The X-ray performance of high resistivity (`high-rho') scientific CCDs

摘要

e2v technologies have recently been developing large area (2k*4k), high resistivity (>8 Mem) silicon CCDs intended for infrared astronomy. The use of high resistivity silicon allows for a greater device thickness, allowing deeper, or full, depletion across the CCD that significantly improves the red wavelength sensitivity. The increased depletion in these CCDs also improves the quantum efficiency for incident X-ray photons of energies above 5 keV, whilst maintaining spectral resolution. The use of high resistivity silicon would therefore be advantageous for use in future X-ray astronomy missions and other applications. This paper presents the measured X-ray performance of the high resistivity CCD247 for X-ray photons of energies between 5.4 keV to 17.4 keV. Here we describe the laboratory experiment and results obtained to determine the responsivity, noise, effective depletion depth and quantum efficiency of the CCD247.