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首页> 外文期刊>IEEE Transactions on Nuclear Science >The depletion depth of high resistivity X-ray CCDs
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The depletion depth of high resistivity X-ray CCDs

机译:高电阻率X射线CCD的耗尽深度

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The authors have developed several techniques which allow measurement of the depletion depth of X-ray CCDs used for imaging and spectroscopy in the 0.2-10 keV energy band. These methods were developed as part of the calibration program for the AXAF CCD Imaging Spectrometer (ACIS). The depletion depth is a parameter that determines the high-energy detection limit of the CCDs. One technique is based on the analysis of long traces of high energy ionizing particles traveling through the CCD nearly parallel to its surface. Measuring the ratio of the narrow portion of the trace to the broader diffused portion allows one to extract the depletion depth. Two other methods require illumination of the device with a monochromatic X-ray source (radioactive Fe/sup 55/ for instance). Analysis of the spectral distribution of the singleand multipixel events yields the depletion depth. By suitable choice of CCD operating voltages the authors were able to reach a depletion depth of 75 microns with the ACIS devices. They also present a simple analytical technique to calculate the depth of the depletion region in this essentially three dimensional structure.
机译:作者开发了几种技术,可以测量在0.2-10 keV的能带中用于成像和光谱学的X射线CCD的耗尽深度。这些方法是AXAF CCD成像光谱仪(ACIS)校准程序的一部分。耗尽深度是确定CCD的高能量检测极限的参数。一种技术是基于对高能量电离粒子的长痕迹的分析,该粒子通过CCD几乎平行于其表面。测量迹线的狭窄部分与较宽的扩散部分的比率可以使人们提取出耗尽深度。另两种方法需要用单色X射线源(例如放射性Fe / sup 55 /)照射设备。分析单像素和多像素事件的光谱分布会得出耗尽深度。通过适当选择CCD工作电压,作者能够使用ACIS器件达到75微米的耗尽深度。他们还提出了一种简单的分析技术来计算此基本三维结构中的耗尽区深度。

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