Material engineering in Cylindrical Surrounding Double Gate (CSDG) MOSFETs for enhanced electrostatic integrity and RF performance

摘要

This paper investigates influence of material engineering on the performance parameter of (Cylindrical Surrounding Double Gate) CSDG MOSFET for improvement in performance. CSDG MOSFETs are evaluated for various parameters such as surface potential, electric field, drain on current, off current, transconductance, cut-off frequency and total gate input capacitance. The comparison of the gate material engineering on CSDG MOSFET has been done on the normal CSDG MOSFET incorporating dual materials at gate electrode, using the ATLAS 3D device simulator. The result shows that, with incorporation of dual materials on the gate electrode, the device performance parameter improves by shifting the higher electric field and minimum surface potential more towards the source side than in the normal CSDG MOSFET.