Formation of a double electric layer at the Zn{sub}mIn{sub}2S{sub}(m+3) (m = 1,2,3)-H{sub}2O(S{sup}(2-)/S{sub}2{sup}(2-)) interface

摘要

The attempt to explain the mechanism of electric double layer formation at electrolyte H{sub}2O(S{sup}2/S{sub}2{sup}2) interface with photoelectrode based on ternary semiconductor compounds ZnIn{sub}2S{sub}4 is the purpose of this work. Space charge layer in the semiconductor having thickness L{sub}D = 10{sup}(-3) cm and electrostatic field value at interface electrolyte/semiconductor E≈10{sup}4 V/cm was calculated.