Open aperture microgated carbon nanotube FEAs

摘要

We have measured up to 10mA and 3.5A/cm{sup}2 from carbon nanotube field emitter arrays (CNT-FEAs) at gate voltages from 41 to 85V. We grew the CNTs inside 1.5μm diameter open apertures lined with 0.25μm of SiO{sub}2 using DC plasma chemical vapor deposition (CVD) The oxide liner helped position the CNTs in the center of the cells and reduced the gate current by preventing the carbon nanotubes from contacting the gate. The apertures were spaced 4 microns apart in 100×100 or 200×200 cell arrays, occupying areas of 0.16mm{sup}2 or 0.64mm{sup}2, respectively.