First time right deposition of embedded SiGe in new products

摘要

Embedded SiGe, used to boost pFET performance, is grown by selective epitaxy on silicon. Pattern density effects cause the deposited thickness to be different across different product chips under otherwise identical conditions. Since device control depends critically on thickness, we apply a pattern-density based predictive growth rate, which is used as input for the existing advanced process control method. We demonstrate that the deposited layer thickness is in acceptable range for device performance across a product chip.