Improved Deep Body Implant on Breakdown Voltage in Super Junction of Vertical VDMOS

摘要

In this paper, we demonstrate a new technique to improve the breakdown voltage of a vertical n-channel power transistor (VDMOS) by increasing the energy of its Deep Body implant by 50%. The charge balancing of the p-body and the n-drift region can such be successfully adjusted resulting in higher blocking voltages without significant increase On resistance.