Silicon-Germanium (SiGe) composition and thickness determination via simultaneous smallspot XPS and XRF measurements

摘要

The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements. Measurements of SiGe films in various applications were explored. It is shown that the measurement is sensitive and linear over a much wider range of SiGe thickness, with excellent precision. Long term stability of the measurement is also shown to be very good.