Plasma-assisted printing and doping processes for manufacturing few-layer MoS2-based electronic and optoelectronic devices

摘要

MoS2 and other emerging two-dimensional layered transition metal dichalcogenides hold the promise for making novel nanoelectronic, optoelectronic, and biosensing devices with new or significantly improved functionalities. To realize this potential and especially enable scale-up device applications of such atomically layered materials, new nanomanufacturing and material processing methods are needed for producing device structures of MoS2 and other layered materials over large areas and tailoring the band structures of as-produced raw materials to achieve desirable electronic and photonic properties. In this paper, we systematically review our recent progress in developing new plasma-assisted printing and doping technologies for paving few-layer and multilayer MoS2 structures over centimeter-scale areas and demonstrating new device applications in non-volatile memory transistors and thin-film photovoltaics. Our presented methods, although in the early development stage, hold significant potential to be further developed into upscalable manufacturing systems.