首页> 外文会议>Annual SEMI Advanced Semiconductor Manufacturing Conference >A Holistic Approach Toward UHP Gas Delivery System Design Reduces Stochastic Variability Of Reactant Distribution In Plasma Etch And Deposition Equipment : EO: Equipment Optimization
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A Holistic Approach Toward UHP Gas Delivery System Design Reduces Stochastic Variability Of Reactant Distribution In Plasma Etch And Deposition Equipment : EO: Equipment Optimization

机译:UHP气体输送系统设计的整体方法可降低等离子体蚀刻和沉积设备中反应物分布的随机变化:EO:设备优化

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Pulsed nanoscale dry processes rely on stable and repeatable reactant delivery, among other important process considerations. Gas delivery systems designed for continuous etch, and for continuous deposition, may not be up to the challenge of pulsed nanoscale processing as a result of the overall gas delivery system design, or as a result of mass flow controller performance. MFC transients are a source of stochastic process variability, particularly in short Atomic Layer Etch cycles. We performed evaluations of various MFC technologies using SEMI standard procedures, and present results here from the data we collected.
机译:脉冲纳米级干法依赖于稳定和可重复的反应物递送,其中包括其他重要的过程考虑。 由于整体气体输送系统设计或质量流量控制器性能的结果,设计用于连续蚀刻的气体输送系统和用于连续沉积,可能不会达到脉冲纳米级处理的挑战。 MFC瞬变是随机处理变异性的源,特别是在短原子层蚀刻循环中。 我们使用半标准程序执行了各种MFC技术的评估,并从我们收集的数据中呈现出现的结果。

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