首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems >A FULLY-DIFFERENTIAL, MULTIPLEX-SENSING INTERFACE CIRCUIT MONOLITHICALLY INTEGRATED WITH TRI-AXIS PURE OXIDE CAPACITIVE CMOS-MEMS ACCELEROMETERS
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A FULLY-DIFFERENTIAL, MULTIPLEX-SENSING INTERFACE CIRCUIT MONOLITHICALLY INTEGRATED WITH TRI-AXIS PURE OXIDE CAPACITIVE CMOS-MEMS ACCELEROMETERS

机译:一种全差分,多路复用的界面电路,与三轴纯氧化物电容CMOS-MEMS加速度计单片集成

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The integration of a CMOS multi-channel readout circuit and tri-axis capacitive accelerometers on a single chip has been demonstrated in this work. The tri-axis mechanical structure together with the monolithic tri-axis multiplexed accelerometer interface circuit is proposed and demonstrated for the first time. Such a system exhibits the following features: (1) the smallest chip size is realized by a timing-based readout circuit; (2) the signal-to-noise ratio (SNR) is enhanced by a fully differential sensing mechanism; and (3) the stacking of the pure oxide layers, serving as the mechanical structures, enhances temperature stability. As a result, the sensing system not only reduces the total chip size but significantly improves the overall system performance.
机译:在这项工作中,已经证明了CMOS多通道读出电路和三轴电容式加速度计的集成。三轴机械结构与单片三轴复用加速度计接口电路一起提出并首次演示。这种系统表现出以下特征:(1)通过基于时序的读出电路实现最小的芯片尺寸; (2)通过全差分传感机制增强信噪比(SNR); (3)用作机械结构的纯氧化物层的堆叠增强了温度稳定性。因此,传感系统不仅可以减少总芯片尺寸,而且显​​着提高了整体系统性能。

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