Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests

摘要

The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices. With the latest developments in manufacturing techniques, the fabrication of insulated gate bipolar transistor (IGBT) devices with blocking voltages as high as 20 kV are now possible. A complete practical understanding of ultra-high voltage silicon carbide device switching parameters is not yet known. The purpose of this research is to show switching parameters extracted from inductive and resistive switching tests performed on state of the art 20 kV silicon carbide IGBTs. Resistive switching tests were used to extract device rise time, fall time, turn-on delay, turn-off delay and conduction losses. Double pulsed inductive switching tests were used to extract turn-on and turn-off switching energies and peak power dissipation. The data was obtained at case temperatures from 25 C to 150 C.