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Four-terminal field-emission characteristics of double-gate metallic field-emitter array cathodes with controlled apex sizes fabricated by molding and self-aligned gate process

机译:双栅极金属场 - 发射极阵列阴极具有通过模制和自对准栅极工艺制造的具有控制顶尖尺寸的双栅极金属场 - 发射极阵列阴极的四端子 - 发射特性

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The field-emission characteristics of double-gate metallic tip array devices were studied. The array consist of pyramidal shaped molybdenum field emitters with ~20 nm-apex-sizes fabricated by a mold technique. By a self-aligned gate-process, we have fabricated double-gate devices with up to 40 times 40-tips. The measurement of the emission current transfer characteristics as a function of the electron extraction gate bias and of the collimation gate bias showed that the influence of the collimation gate bias on the apex field is a factor of ~5 smaller than that of the extraction gate bias voltage in our devices.
机译:研究了双栅极金属尖端阵列装置的现场排放特性。该阵列由金字塔形钼磁场发射器组成,具有〜20 nm-顶尖的尺寸,由模具技术制造。通过自对齐的门工艺,我们拥有高达40倍的双栅极设备40倍。作为电子提取栅极偏置和准直栅极偏置的函数的发光电流传递特性的测量表明,准直栅极偏置对顶点字段的影响是小于提取栅极偏置的因子〜5的因子我们的设备中的电压。

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