Emission Properties of Metal-oxide-semiconductor Cathodes based on Nanocrystalline Silicon

摘要

A metal-oxide-semiconductor cathode has been fabricated based on nanocrystalline silicon prepared by a pulsed laser ablation technique. The emission current and the transfer ratio are sensitive to the thickness of the gate electrode. Electron emission occurs at the extraction voltage as low as the work function of the top electrode. The transfer ratio is improved to4% by reducing the thinness to 5nm.