High-density gate aperture arrays for Mo-FEAs fabricated by electron beam lithography

摘要

Electron sources are of great importance for the operation of the microwave devices. High-density field emitter arrays (FEA) can be used as electron sources for microwave devices with frequencies extending into the THz. In this work, we report on the successful application of electron beam lithography for fabricating the high-density gate aperture arrays for Mo-FEAs. We demonstrate gate aperture arrays with sub-micron pitch and density up to 10 tips / cm. The results can provide useful information for the application of field emitter arrays to special microwave devices.