Improving the Sustainability of Circuits by Using Honey Gate in Transistors for Printing Electronics

摘要

This paper reports the fabrication of flexible logic gates using printed field effect transistors made by Graphene as semiconductor and honey as the gate material. PMOS transistors were made with Graphene and then analyzed to find the voltage characteristics and best operation mode. The PMOS transistors showed a good slew rate. Details of design and fabrication were studied and reported. The PMOS circuits included Inverters, AND logic, and OR logic. The logic gate performance was compatible to the circuit simulation observed by transistor models. These new logic gates have applications in biomedical interfacing and wearable electronics.