Spin transmission through magnetic/nonmagnetic semiconductors interface

摘要

We study the contact resistance of strongly doped ferromagnetic/non-magnetic semiconductors structure (p~+-F/n~+-N). Because of the strong effect that the barrier shape has on the tunneling probabilities, we evaluate, as accurately as possible, the quantum-mechanical spin-dependent transmission across the Esaki barrier built up at the p-n interface. To simplify the discussion and calculation of transmission coefficients through the Esaki barrier, we concentrate here on the structure p~+-F/n~+-N, without a stop layer Ⅰ. We evaluate the spin injection and spin extraction transmission coefficients T_(↑↑) and T_(↓↓), and the spin transmission polarization as functions of bias potential, exchange interaction energy and Fermi energy level for specific realizations of the structure p~+-Ga_(1-x)Mn_xAs/n~+-GaAs.