Excellent surface passivation by silicon dioxide grown with a electrochemical method

摘要

A novel method to grow silicon dioxide layers for passivating the silicon surface is gien more attention. SiO_2 was grown by applying a positive voltage across silicon wafers in a nitric acid solution at low temperature. After annealing in N; media at 900°C for 2()min, excellent surface passivation was achieved. The maximum effective lifetime of the silicon arricd at 2l).8us and 29.75u,s, which was three times the value of silicon without passivation. The effective lifetime of other types of silicon could be ten times the initial value without the silicon dioxide. A comparison study of the effect of the FGA, annealing at low temperature and annealing in N? or (): containing medium at high temperature were investigated.