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Sol-gel deposited gallium-doped zinc oxide electrode for polymer light-emitting diode applications

机译:用于聚合物发光二极管应用的溶胶 - 凝胶沉积镓掺杂的氧化锌电极

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We have made a sol-gel deposited gallium-doped zinc oxide (GZO) film as a transparent conductive anode in polymerlight-emitting diode (PLED) applications. The GZO films were obtained by spin-coating GZO precursor solutionsfollowed by consecutive thermal annealing in the air and in the hydrogen-rich atmosphere. The resistance of GZO filmwas reduced to ~100 Ω/□ after thermal annealing in the hydrogen environment. Its surface roughness was sufficientlylow (1.159 nm RMS) for depositing other polymer layers. We have fabricated PLEDs with quartz substrate / solution-processedGZO electrode (anode) / PEDOT:PSS (HITL) / SPG-01T (Green polymer light-emitting material purchasedfrom Merck, EML) / Ca (EIL) / Al (Cathode). The fabricated devices showed current efficiency of 3.06 cd/A and powerefficiency of 1.25 lm/W at luminance of 1000 cd/msup2/sup.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
机译:我们已经使溶胶浸渍掺杂的掺杂氧化锌(GZO)膜作为聚合物发光二极管(PLED)应用中的透明导电阳极。通过在空气中连续的热退火和富含氢气的气氛脱涂的GZO前体溶液来获得GZO薄膜。 GZO薄膜在氢气环境中热退火后,GZO FOOPWAS的电阻降低至〜100&ω; /□。其表面粗糙度足以沉积其它聚合物层的足够的(1.159nm rms)。我们用石英底座/溶液 - 加工后的电极(阳极)/ PEDOT(阳极)/ PEDOT(MERCK,EML)/ CA(EIL)/ AL(阴极)/ AL(eIL)/ al(阴极)(MITL)/ SPG-01T(阳极)/ PECOT(MITL)/ SPG-01T(阳极)/ PEDOT(MITL)/ SPG-01T(阳极)/ PECOT。制造的装置显示出电流效率为3.06℃/ a,亮度为1.25 lm / w,亮度为1000cd / m 2 。©(2012)版权协会照片光学仪表工程师(SPIE)。仅供个人使用的摘要下载。

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