Packaging of High-temperature Power SiC Device with Nano-silver Paste

摘要

Nano-silver paste, which possesses not only high thermal and electrical conductivities but also high temperature-resistance, is used as die-attaching materials. Solder bump interconnection, instead of conventional wire-bonding, is employed as a means of electrical interconnection in the packaging of SiC power device, improving heat-dissipating efficiency and electrical performance. Direct-bond-copper (DBC)/alumina (Al2O3), with good thermal conductivity and compatible coefficient thermal expansion (CTE) matching, is selected as substrate. The forward and reverse current versus voltage measurements of assembled module are conducted under the high temperature of 250 oC. The measured results show that diode works well and critical ratings such as power-on resistance and reverse breakdown voltage are all within specifications.