Influence of surfactant on Si{111} etched surface

摘要

The anisotropy etched technique of single crystal silicon in alkaline solution with high pH value has become one of the key technique for MEMS development. Production of smooth,defect-free silicon surface is essential for fabrication of all kinds of devices. In order to gain optimal silicon etched surface,non-ion surfactant was added in silicon{111} etchants,and its concentration was different and over than CMC(Critical Micelle Concentration). From the experiment results,it can be seen that the etched n-Si{111} surface was improved with increasing concentration of surfactant. Using such method the optimal etched surface can be gotten.