首页> 外文会议>Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMP-MIC) >Dynamical Mechanism of Chemical Mechanical Polishing Analyzed by Frictional Force Measurement
【24h】

Dynamical Mechanism of Chemical Mechanical Polishing Analyzed by Frictional Force Measurement

机译:摩擦力测量分析化学机械抛光的动力学机理

获取原文

摘要

The dynamical mechanism of chemical mechanical polishing (CMP) was proposed. The relationships between removal rate and CMP parameters were evaluated by directly measuring the frictional force acting on a wafer under actual CMP conditions. According to the measurements, we devised a new experimental equation to replace Preston's empirical equation, by taking into account the dynamic frictional coefficient and the polishing efficiency. To conduct the equation, the dependences of the CMP characteristics on down force and sliding speed were analyzed quantitatively. This analysis showed that polishing efficiency decreases with increasing sliding speed, while it remains constant with changing down force. This result suggests that the removal mechanism changes with sliding speed, while it does not change with down force. Moreover, the decrease in removal efficiency was found to be less for a mechanical-effect-dominant slurry than for a chemical-effect-dominant slurry. The results suggest that Preston's empirical equation is valid for mechanical-effeet-dominant polishing.
机译:提出了化学机械抛光(CMP)的动力学机理。通过直接测量在实际CMP条件下作用在晶片上的摩擦力来评估去除速率与CMP参数之间的关系。根据测量结果,我们考虑了动摩擦系数和抛光效率,设计了一个新的实验方程式来代替普雷斯顿的经验方程式。为了进行该方程式,定量分析了CMP特性对下压力和滑动速度的依赖性。该分析表明,抛光效率随着滑动速度的增加而降低,而随着下压力的变化而保持恒定。该结果表明,移除机构随着滑动速度而变化,而随着下压力而变化。此外,发现对于机械效果占优势的浆料,去除效率的降低小于对化学效果占优势的浆料的去除效率的降低。结果表明,普雷斯顿的经验公式对于机械效率主导的抛光是有效的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号