首页> 外国专利> METHOD AND AN APPARATUS FOR DETERMINING SHEAR FORCE BETWEEN A WAFER HEAD AND A POLISHING PAD IN A CHEMICAL MECHANICAL POLISHING PROCESS, CAPABLE OF CALCULATING THE FRICTION COEFFICIENT BETWEEN A WAFER AND THE POLISHING PAD

METHOD AND AN APPARATUS FOR DETERMINING SHEAR FORCE BETWEEN A WAFER HEAD AND A POLISHING PAD IN A CHEMICAL MECHANICAL POLISHING PROCESS, CAPABLE OF CALCULATING THE FRICTION COEFFICIENT BETWEEN A WAFER AND THE POLISHING PAD

机译:测定化学机械抛光过程中晶片头和抛光垫之间的剪切力的方法和装置,该方法和装置能够计算晶片和抛光垫之间的摩擦系数

摘要

PURPOSE: A method and an apparatus for determining shear force between a wafer head and a polishing pad in a chemical mechanical polishing(CMP) process are provided to improve the precision of the shear force by including a plate which slides between the center of the polishing pad and the wafer head.;CONSTITUTION: A CMP tool(10) is located on a wafer head(12). The CMP tool includes a rotary unit(14), a diamond conditioner disc(16) and a polishing pad(20). The wafer head and a support unit are placed on a plate. The plate is connected to the framework of the CMP tool by a low friction movement unit. The low friction movement unit slides to a vertical direction to the center of the polishing pad and the wafer head. A load cell sensor is fixed to the framework of the CMP tool. Shear force is determined according to signal from the load cell sensor.;COPYRIGHT KIPO 2010
机译:目的:提供一种用于在化学机械抛光(CMP)工艺中确定晶片头与抛光垫之间的剪切力的方法和设备,以通过包括在抛光中心之间滑动的板来提高剪切力的精度。组成:CMP工具(10)位于晶片头(12)上。该CMP工具包括旋转单元(14),金刚石修整盘(16)和抛光垫(20)。晶片头和支撑单元被放置在板上。该板通过低摩擦运动单元连接到CMP工具的框架。低摩擦运动单元在垂直方向上相对于抛光垫和晶片头的中心滑动。称重传感器固定在CMP工具的框架上。剪切力根据来自称重传感器的信号确定。; COPYRIGHT KIPO 2010

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