In this study we present the results of electroless deposition of silver (Ag) and silver tungsten (AgW) layers on Si and SiO_2, intended for application in microelectronics and MEMS technology.. The Ag was studied for its excellent conductivity, and the AgW alloy was developed as both barrier layer and capping layer for corrosion protection for the Ag thin films. We studied the deposition rate and the alloy composition as a function of the deposition parameters. We also studied the thin film morphology using Atomic Force Microscopy (AFM) images of the surface after each process step. We have obtained AgW thin films, which have significantly lower electrical resistivity, than Ag films under the same conditions of deposition
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