首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >The Novel TEOS-O_3 CVD USG Process by Chamber Surface Characterization
【24h】

The Novel TEOS-O_3 CVD USG Process by Chamber Surface Characterization

机译:腔室表面表征的新型TEOS-O_3 CVD USG工艺

获取原文

摘要

This work presents a novel sub-atmospheric CVD (SACVD) undoped silicon glass (USG) process by suing TEOS-O_3 films to do chamber seasoning instead of conventional PETEOS films. PETEOS oxide seasoned on the showerhead will induce surface sensitivity effect for the subsequent SA-USG films deposition and caused lower deposition rate, faster wet-etching rate. Our results indicated tht non-surface-sensitive oxide, such as low-pressure TEOS-O_3 film, could be used to replace PETEOS oxide seasoning, by using this process, superior film quality, higher deposition rates and throughput, better particle performance could be obtained for the following SAUSG film deposition.
机译:这项工作提出了一种新的低于大气压CVD(SACVD)的非掺杂硅玻璃(USG)工艺,该工艺通过使用TEOS-O_3膜代替传统的PETEOS膜进行腔室处理。在喷头上调味的PETEOS氧化物将对随后的SA-USG膜沉积产生表面敏感性效应,并导致较低的沉积速率和更快的湿法刻蚀速率。我们的结果表明,这种非表面敏感的氧化物(例如低压TEOS-O_3膜)可以用来代替PETEOS氧化物调味料,通过这种方法,可以提供出众的膜质量,更高的沉积速率和产量,更好的颗粒性能。获得用于以下SAUSG膜沉积的材料。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号