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Electron holography of biased semiconductor junctions

机译:偏置半导体结的电子全能

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A two-contact TEM biasing holder has been designed and constructed for use in the Cambridge Philips CM300 FEGTEM. A silicon semiconductor device has been examined using off-axis electron holography under a reverse bias of 0 to 3V. Reconstructed differential phase images reveal changes in the electrostatic potential with varying reverse bias. Examination of a Si device without bias using off-axis electron holography has also been performed, indicating a phase change of 2.8 radians across the p-n junction. This corresponds to a built-in voltage of 0.85V, close to the expected value demonstrating the truly quantitative nature of electron holography.
机译:双触摸TEM偏置支架设计并构建用于Cambridge Philips CM300 Fegtem。已经在0至3V的反向偏压下使用偏离轴电子全能检查硅半导体器件。重建的差分相位图像揭示了具有变化反向偏置的静电电位的变化。还执行了使用偏离轴电子全全息术的无偏压的SI器件,表明在P-N结周围的2.8弧度的相变。这对应于0.85V的内置电压,接近预期值,示出了电子全息术的真正定量性质。

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