首页> 外文会议>Symposium on VLSI Circuits >A 1.15μW 5.54mm3 Implant with a Bidirectional Neural Sensor and Stimulator SoC utilizing Bi-Phasic Quasi-static Brain Communication achieving 6kbps-10Mbps Uplink with Compressive Sensing and RO-PUF based Collision Avoidance
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A 1.15μW 5.54mm3 Implant with a Bidirectional Neural Sensor and Stimulator SoC utilizing Bi-Phasic Quasi-static Brain Communication achieving 6kbps-10Mbps Uplink with Compressive Sensing and RO-PUF based Collision Avoidance

机译:1.15μW5.54mm3采用双向神经传感器和刺激器SOC,利用双阶段准静态脑通信实现6kbps-10Mbps上行链路,采用压缩传感和基于RO-PUF的碰撞避免

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To solve the challenge of powering and communication in a brain implant with low end-end energy loss, we present Bi-Phasic Quasi-static Brain Communication (BP-QBC), achieving < 60dB worst-case channel loss, and ~41X lower power w.r.t. traditional Galvanic body channel communication (G-BCC) at a carrier frequency of 1MHz (~6X lower power than G-BCC at 10MHz) by blocking DC current paths through the brain tissue. An additional 16X improvement in net energy-efficiency (pJ/b) is achieved through compressive sensing (CS), allowing a scalable (6kbps-10Mbps) duty-cycled uplink (UL) from the implant to an external wearable, while reducing the active power consumption to 0.52μW at 10Mbps, i.e. within the range of harvested body-coupled power in the downlink (DL), with externally applied electric currents < 1/5th of ICNIRP safety limits. BP-QBC eliminates the need for sub-cranial interrogators, utilizing quasi-static electrical signals for end-to-end BCC, avoiding transduction losses.
机译:为了解决低端终端能量损失的脑植入中电力和通信的挑战,我们呈现了双相位准静态脑通信(BP-QBC),实现了<60dB最坏情况的信道损耗,〜41倍降低 WRT. 通过阻塞通过脑组织的DC电流路径,传统的电流体通道通信(G-BCC)以1MHz的1MHz(比G-BCC低于G-BCC)。 通过压缩检测(CS)实现净能效(PJ / B)的额外16倍改善,允许从植入物到外部可穿戴的可扩展(6kbps-10mbps)占空比上行(UL),同时减少有效 功耗为10Mbps0.52μW,即在下行链路(DL)中收获的车身耦合电源范围内,外部施加的电流<1/5 ICNIRP安全限制。 BP-QBC消除了利用用于端到端BCC的准静态电信号的子颅上询问器的需求,避免了转导损耗。

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