Anisotropy in thermal oxidation of 6H-SiC

摘要

The dependence of thermal oxidation rate on crystallographic orientation of 6H-S1C was studied by measuring the oxide thickness distribution on concave groove surface formed on 6H-SiC epitaxial wafers with orientations of (0001) C-face and (0001) Si-face. The oxidation rate takes a maximum value on (0001) C-face and decreases towards the minimum value on (0001) Si-face with drastic change at around critical angle of 20 ° from (0001) C-face. But, the oxidation rate is independent of the face angle from (1120) plane.