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EFFECTS OF SURFACE ZETA POTENTIAL ON THE FILTRATION BEHAVIOR OF COLLOIDAL ABRASIVES

机译:表面Zeta电位对胶体磨料过滤行为的影响

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In order to reduce scratches attributed to the CMP (chemical mechanical planarization) polishing processes, defect-causing large particle counts must be reduced to improve semiconductor yields. CMP slurry filtration is considered as a critical enabler of these yield improvements. As the process technology advances, the abrasive concentrations of CMP slurries will continue to be lowered while abrasive sizes will be smaller. To respond to such changes in slurry properties, it's imperative to reconsider slurry filtration strategies. With such changes in slurry properties, it's expected that the slurry abrasives will become less stable in the future. As many researchers have reported, proper slurry stability and their interactions with filtration media are very important for better particle removal in particle separation processes. In this study, we will investigate the effects of zeta potential of filtration media and abrasive particles on filtration performance under different conditions. We will compare the filtration performance when the zeta potential of the slurries is lower than, equal to, or higher than that of the filtration media. We will also compare filtration performance at the isoelectric point (I.E.P) of the slurry. At same time we will monitor LPC (liquid particle counts), PSD (particle size distribution), and idle effects under these conditions. We expect the results of this study to propose a filter selection index for advanced slurry applications.
机译:为了减少归因于CMP(化学机械平面化)抛光过程的划痕,必须减少缺陷,以提高半导体产率。 CMP浆料过滤被认为是这些产量改善的关键推动者。随着过程技术的进步,CMP浆料的磨料浓度将在磨料尺寸较小时继续降低。为了应对浆液性质的这种变化,重新考虑浆料过滤策略是必要的。随着浆料性质的这种变化,预计将来泥浆磨料将变得不那么稳定。由于许多研究人员报道,适当的浆料稳定性及其与过滤介质的相互作用对于更好的颗粒分离过程中的颗粒除去非常重要。在这项研究中,我们将研究Zeta电位对不同条件下过滤性能的Zeta电位对过滤性能的影响。当浆料的Zeta电位低于,等于或高于过滤介质的Zeta电位时,我们将比较过滤性能。我们还将比较浆料的等电点(即,I.3)的过滤性能。同时我们将监测LPC(液体粒子计数),PSD(粒度分布),并在这些条件下怠速效应。我们预计本研究的结果提出了用于高级浆料应用的过滤器选择指标。

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