Small signal analysis of a SOI MOSFET device with a novel area efficient body contact

摘要

The small signal parameters of novel area efficient source-to-body contacted SOI MOSFET are determined using three dimensional device simulations and compared to conventional body contacted and floating body PD SOI MOSFETs. The proposed device exhibits higher drive current with complete suppression of floating body effects. The gate transconductance (g/sub m/) shows improvement by 16% at V/sub GS/=1 V and V/sub DS/=2 V compared to conventional BTS structures. The drain conductance (g/sub ds/) and gate-to-source capacitance C/sub gs/ are similar to conventional BTS structures.