Improved Hydrogen Sensing Performance of AlGaN/GaN based sensor with Platinum Nanonetworks

摘要

Platinum nanonetworks with 2～3 nm diameter were synthesized by a simple solution phase method, and applied to AlGaN/GaN based diode and HEMT for the hydrogen sensing. Uniformly distributed selective-area deposition of the Pt nanonetworks was achieved by the standard photoresist lift-off technique and spin coating method. Compared to conventional Pt thin film diode and HEMT sensors, the Pt nanonetwork sensors showed remarkably larger current changes for 4% H_2 exposure, which resulted from the dissociating of larger amount of hydrogen molecules on the increased surface area of the Pt nanonetworks.