Photoluminescence from deep levels in Fe-doped InP substrates

摘要

Photoluminescence (PL) measurements have been carried out at room temperature in commercially-available 4-inch-diameter Fe-doped semi-insulating InP substrates with a high-sensitivity PL mapping system using photon-counting technique. Not only a sharp PL line due to band-to-band transition but a broad PL line due to recombination via deep levels are successfully detected at room temperature. It is found from a comparison between band-to-band and deep-level PL maps measured near striation pattern that there is a correlation between their PL intensities.