High Power AlGaN/GaN HEMT's

摘要

The efficiency impacts of loading, channel width, and the phase difference between channels are presented for passivated AlGaN/GaN HEMT's that have undoped, polarization-induced 2DEG. For 1.5 mm periphery HEMT's it is shown that 10 channels yield the best high power performance in class B operation at 10 GHz.